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RIR Power Electronics to Develop India’s First Silicon Carbide Semicon Plant

Mumbai-headquartered RIR Power Electronics Ltd. (formerly Ruttonsha International Rectifier Ltd.), will be developing India’s first Silicon carbide semiconductor plant in Odisha.

Rs. 618 Crore to be Invested in Phase-1 of Plant

RIR Power Electronics will invest about Rs. 618 crore to develop phase-1 of the aforementioned plant, which is expected to be commissioned by December 2025. The company will produce Silicon carbide (SiC) epitaxy wafers at this plant. SiC epitaxy wafers are instrumental in the production of high-power electronic components which find applications in areas such as Electric Vehicles (EVs), power converters, Renewable Energy (RE) systems, industrial automation systems, and more.

As per RIR Power Electronics, this investment will aid in “…strengthening domestic manufacturing capabilities under the Make in India Initiative to produce high power Mosfets and Diodes from 3.3KV to 20KV”.

Details about the following phases of RIR’s Odisha semiconductor plant have not been disclosed.

SiC Semiconductors Superior to Silicon-based Semiconductors

Silicon carbide (SiC) has in recent years emerged as a superior alternative to Silicon-based semiconductors. In fact, SiC semiconductors (along with Gallium nitride semiconductors) are referred to as third-generation semiconductors.

SiC semiconductors have better thermal conductivity than Silicon semiconductors, which enhances their durability at high temperatures. SiC also has a higher bandgap than Silicon (by almost 3 times), which makes SiC a much better choice for high-voltage applications. Apart from this, SiC-based semiconductors have higher efficiency in terms of switching losses, and they can be constructed in a smaller size as compared to equivalent Silicon-based semiconductors.

India’s SiC Semicon Market an Area of Opportunity

As per Data Bridge Market Research, the Indian SiC semiconductor market was valued at USD 41.36 million in 2023, and it is expected to grow to USD 93.94 million by 2031. Growth CAGR of this market is projected to be 10.8% between 2024 and 2031. RIR’s plant will be the country’s first to produce SiC-based semiconductors, which makes it a prime development in the country’s semiconductor scene. Moreover, it also highlights SiC-semiconductors as an area of opportunity for other domestic players.

EV Industry to Generate Bulk of SiC-Semiconductor Demand

Demand of SiC-based semiconductors is expected be driven by the EV sector. Different market reports suggest that about 70-75% of SiC-semiconductor demand comes from the EV industry (globally). As per McKinsey & Co., about 50% of the battery-based EVs produced globally could be using SiC-based semiconductors in their powertrains by 2027 from 30% of battery-based EVs in 2024.

Moreover, Indian EV market is projected to grow at a staggering CAGR of 28.52% to reach USD 18.32 billion in 2029 from USD 5.22 billion in 2024 [Data from a January 2025 IBEF report]. Keeping this in mind, it becomes obvious that India’s growing EV market will catalyse the demand for SiC-based semiconductors in the country.

About RIR Power Electronics Ltd.: RIR Power Electronics (earlier Ruttonsha International Rectifier Ltd.) has been in the power electronics industry since 1969. The company has had a five-decade long association with US-based power electronics semiconductor manufacturer, International Rectifier.